1. 矽成
  2. 動態記憶體
  3. EDO和FP動態隨機存取記憶體
  4. 5V
  5. 16M 1Mx16
  6. SOJ(42), TSOP2(44/50)
  7. IS41C16100C

  IS41C16100C

數據表
索取報價
容量 16M
規格 1Mx16
電壓 5V
類型 EDO
刷新 1K
速度 50
狀態 Prod
評注
腳位數 SOJ(42), TSOP2(44/50)
產品系列 41 = Asynchronous
字數 100 = 1M
工作電壓範圍 C = 5V
總線寬度 16 = x16
數據表
索取報價

IS41C16100C 特徵

  • TTL compatible inputs and outputs; tristate I/O
  • Refresh Interval: —  Auto refresh Mode: 1,024 cycles /16 ms —  RAS-Only, CAS-before-RAS (CBR), and Hidden — Self refresh Mode: 1,024 cycles /128 ms
  • JEDEC standard pinout
  • Single power supply: 5V ± 10% (IS41C16100C) 3.3V ± 10% (IS41LV16100C)
  • Byte Write and Byte Read operation via two CAS

概觀

The ISSI IS41C16100C and IS41LV16100C are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Ac- cess Memories. These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 30 ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS41C16100C-50KI IS41C16100C-50TI 1,170 1,170
IS41C16100C-50KI-TR IS41C16100C-50TI-TR
IS41C16100C-50KLI 890 IS41C16100C-50TLI 50,000
IS41C16100C-50KLI-TR IS41C16100C-50TLI-TR