IS46TR82560B-125KBLA1

規格	256Mx8
腳位/封裝	BGA(78)
電壓	1.5V
刷新	8K
速度	125 = 800MHz
字數	256M
型號別	IBIS
焊接	SnAgCu
狀態	Prod
類型	DDR3
總線寬度	8 = x8
温規	Automotive Grade (-40C to +85°C)
CL（CAS延遲）	K = 11
代/版本	B
產品系列	46 = DDR/DDR2/DDR3/DDR4 Automotive grade
温度等级	A1 = Automotive Grade (-40°C to +85°C)
焊料類型	L = SnAgCu
字數	2560 = 256M
Generation	B = B
工作電壓範圍	TR = 1.5V DDR3
腳位/封裝	B = BGA

IS46TR82560B-125KBLA1 特徵

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
High speed data transfer rates with system frequency up to 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency MAY 2017
Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off-Chip Driver Impedance Adjustment)
Programmable Additive Latency: 0, CL-1,CL-2
Dynamic ODT (On-Die Termination)
Programmable CAS WRITE latency (CWL) based
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω) on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or
Write Leveling
Up to 200 MHz in DLL off mode
Operating temperature: Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT) OPTIONS
Configuration: 256Mx8 128Mx16