IS43TR16512A-107MBLI

容量 8G
規格 512Mx16
電壓 1.5V
類型 DDR3
刷新 8K
速度 107 = 933MHz
狀態 Prod
腳位數 BGA(96)
評論上一篇 2 Ranks
產品系列 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
字數 512 = 512M
CL(CAS延遲) M = 13
Generation A = A
工作電壓範圍 TR = 1.5V DDR3
總線寬度 16 = x16
腳位/封裝 B = BGA

IS43TR16512A-107MBLI 特徵

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
  • -Backward compatible to 1.5V
  • High speed data transfer rates with system frequency up to 933 MHz
  • 8 internal banks for concurrent operation
  • 8n-Bit pre-fetch architecture
  • Programmable CAS Latency
  • Programmable Additive Latency: 0, CL-1,CL-2
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Programmable Burst Length: 4 and 8
  • Programmable Burst Sequence: Sequential or Interleave
  • BL switch on the fly
  • Auto Self Refresh(ASR)
  • Self Refresh Temperature(SRT) OPTIONS
  • Configuration: 512Mx16(dual die)
  • Package: 96-ball BGA (10mm x 14mm) ADDRESS TABLE SPEED BIN FEBRUARY 2018
  • Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
  • Partial Array Self Refresh
  • Asynchronous RESET pin
  • OCD (Off-Chip Driver Impedance Adjustment)
  • Dynamic ODT (On-Die Termination)
  • Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
  • Write Leveling
  • Up to 200 MHz in DLL off mode
 

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IS43TR16512A-107MBLI-TR IS43TR16512AL-107MBL 50,000
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