IS43DR16640C-3DBLI

容量	1G
規格	64Mx16
電壓	1.8V
類型	DDR2
刷新	8K
速度	3 = 333MHz
狀態	Prod
評注
腳位數	BGA(84)
產品系列	43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
温度等级	I = Industrial Grade (-40°C to +85°C)
焊料類型	L = SnAgCu
字數	640 = 64M
CL（CAS延遲）	D = 5
Generation	C = C
工作電壓範圍	DR = 1.8V DDR2
總線寬度	16 = x16
腳位/封裝	B = BGA

數據表

索取報價

IS43DR16640C-3DBLI 特徵

Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Double data rate interface: two data transfers per clock cycle
Differential data strobe (DQS, DQS)
4-bit prefetch architecture
On chip DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL) 3, 4, 5, 6 and 7 supported
Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, 5 and 6 supported
WRITE latency = READ latency - 1 tCK
Programmable burst lengths: 4 or 8
Adjustable data-output drive strength, full and reduced strength options
On-die termination (ODT) OPTIONS
Configuration(s): 128Mx8 (16Mx8x8 banks): IS43/46DR81280C 64Mx16 (8Mx16x8 banks): IS43/46DR16640C
Package: x8: 60-ball BGA (8mm x 10.5mm) x16: 84-ball WBGA (8mm x 12.5mm)
Timing
- Cycle time 2.5ns @CL=5 DDR2-800D 2.5ns @CL=6 DDR2-800E 3.0ns @CL=5 DDR2-667D 3.75ns @CL=4 DDR2-533C 5ns @CL=3 DDR2-400B

概觀

ISSI's 1Gb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.

IC 編號	可用數量	IC 編號	可用數量
IS43DR16640C-3DBLI-TR	2,500	IS43DR16640C-25DBLI-TR	2,500
IS43DR16640C-25DBL	1,000	IS43DR16640C-3DBL	5,000
IS43DR16640C-25DBL-TR	2,500	IS43DR16640C-3DBL-TR
IS43DR16640C-25DBLI	1,045

IS43DR16640C-3DBLI

IS43DR16640C-3DBLI 特徵

概觀

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