IS62WV5128EHBLL

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容量 4M
規格 512Kx8
電壓 1.65-3.6V
狀態 Prod
腳位數 sTSOP1(32), TSOP1/2(32), BGA(36)
速度Ns 45, 55
評論上一篇 ECC based SRAM

IS62WV5128EHBLL 特徵

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • Operating Current: 25 mA (max.)
    • CMOS Standby Current: 3.2 uA (typ., 25°C)
  • TTL compatible interface levels
  • Single power supply
    • 1.65V-2.2V VDD (IS62/65WV5128EHALL)
    • 2.2V-3.6V VDD (IS62/65WV5128EHBLL)
  • Optional ERR1/ERR2 pin:
    • ERR1: indicates 1-bit error detection and correction
    • ERR2: indicates 2-bit error detection
  • Three state outputs
  • Commercial, Industrial and Automotive temperature support

概觀

SRAM is one of random access memories. SRAM has three different modes supported. Each function is described below with Truth Table. STANDBY MODE Device enters standby mode when deselected (CS# HIGH). The input and output pins (I/O0-7) are placed in a high impedance state. CMOS input in this mode will maximize saving power. WRITE MODE Write operation issues with Chip selected (CS# LOW) and Write Enable (WE#) input LOW. The input and output pins (I/O0-7) are in data input mode. Output buffers are closed during this time even if OE# is LOW.

 

相關IC编號

IC 編號 庫存數量 可用數量
IS62WV5128EHBLL-TR