IS62WV51216HBLL-TR

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容量 8M
規格 512Kx16
電壓 1.65-3.6V
狀態 S=NOW
腳位數 TSOP2(44), BGA(48)
速度Ns 45, 55
評論上一篇
產品系列 62 = Low Power
Bit Org 16 = x16
Operating Voltage WV = Wide Voltage Range
電壓範圍 BLL = 2.5V to 3.6V
字數 512 = 512K
Revision H = H
外包裝 Tape on Reel

IS62WV51216HBLL-TR 特徵

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • Operating Current: 25 mA (max.)
    • CMOS Standby Current: 3.2 uA (typ., 25°C)
  • TTL compatible interface levels
  • Single power supply
    • 1.65V-2.2V VDD (IS62/65WV51216HALL)
    • 2.2V-3.6V VDD (IS62/65WV51216HBLL)
  • Three state outputs
  • Commercial, Industrial and Automotive temperature support

概觀

The ISSI IS62/65WV51216HALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

 

相關IC编號

IC 編號 庫存數量 可用數量
IS62WV51216HBLL