| 容量 | 2M |
|---|---|
| 規格 | 256Kx8 |
| 電壓 | 1.65-3.6V |
| 狀態 | Prod |
| 腳位數 | SOJ(36), TSOP2(44), BGA(36) |
| 速度Ns | 8, 10, 12 |
| 評論上一篇 | ECC Based SRAM |
The ISSI IS61/64WV2568EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.