IS61WV12816DBLL-10BI

容量	2M
規格	128Kx16
腳位/封裝	BGA
電壓	1.65-3.6V
型號別	IBIS
焊接	SnPb
狀態	Prod
評注	IS61LV12816L, IS61WV12816BLL
硅片版本	D
速度（ns）	10
温規	Industrial Grade (-40C to +85°C)
電壓範圍	2.2V (2.4V/2.5V) to 3.6V
產品系列	61 = High Speed
Bit Org	16 = x16
Operating Voltage	WV = Wide Voltage Range
包裝代碼	B = BGA
電壓範圍	BLL = 2.5V to 3.6V
温度等级	I = Industrial Grade (-40°C to +85°C)
焊料類型	blank = SnPb
字數	128 = 128K
Revision	D = D
速度	10 = 10NS

數據表

索取報價

IS61WV12816DBLL-10BI 特徵

High-speed access time: 8, 10, 12, 20 ns
Low Active Power: 135 mW (typical)
High-speed access time: 25, 35 ns
Low Active Power: 55 mW (typical)
Low Standby Power: 12 µW (typical) CMOS standby
Single power supply — Vdd 1.65V to 2.2V (IS61WV12816DAxx) — Vdd 2.4V to 3.6V (IS61/64WV12816DBxx)
Fully static operation: no clock or refresh required
Three state outputs
Data control for upper and lower bytes
Industrial and Automotive temperature support

概觀

The ISSI IS61WV12816DAxx/DBxx and IS64WV12816D- Bxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.