| 容量 | 8M |
|---|---|
| 規格 | 1Mx8 |
| 電壓 | 1.65-3.6V |
| 狀態 | Prod |
| 腳位數 | TSOP2(44), BGA(48) |
| 速度Ns | 8, 10, 20 |
| 評論上一篇 | |
| 產品系列 | 61 = High Speed |
| Bit Org | 8 = x8 |
| Operating Voltage | WV = Wide Voltage Range |
| 包裝代碼 | M = BGA |
| 電壓範圍 | ALL = 1.65V to 2.2V |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | L = Lead-free (ROHS Compliant) |
| 字數 | 1024 = 1024K |
| 外包裝 | Tape on Reel |
, High-speed access times: 8, 10, 20 ns The ISSI IS61WV10248ALL/BLL and , High-performance, low-power CMOS process IS64WV10248BLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM. The , Multiple center power and ground pins for greater IS61WV10248ALL/BLL and IS64WV10248BLL are fab- ricated using ISSI's high-performance CMOS technol- ogy. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. The IS61WV10248ALL/BLL and IS64WV10248BLL operate from a single power supply and all inputs are TTL-compatible. The IS61WV10248ALL/BLL and IS64WV10248BLL are available in 48 ball mini BGA and 44-pin TSOP (Type II) packages.