IS61DDB24M18C-333M3-TR

Density	72M
Org	4Mx18
Burst	2
Status	Prod
Speed Mhz	250, 300, 333, 400
Comments Previous Revision	IS61DDB24M18A
Product Family	61 = QUAD/P DDR-2/P
Configuration	4M18 = 4M x18
Package Code	M3 = 165-ball BGA (15 x 17 mm)
ROHS Version	= Leaded
Burst Type	B2 = Burst 2
Die Rev	C = C
Read Latency (RL)	blank = 1.5 clock cycles or 2.5 clock cycles
ODT Option	blank = No ODT
Product Type	DD = DDR-II, Common I/O
Temperature Range	blank = Commercial (0°C to 70°C)
Speed	333 = 333MHz
Outpack	Tape on Reel

IS61DDB24M18C-333M3-TR Features

2Mx36 and 4Mx18 configuration available.
Common I/O read and write ports.
Max. 400 MHz clock for high bandwidth
Synchronous pipeline read with self-timed late write operation.
Double Data Rate (DDR) interface for read and write input ports.
Fixed 2-bit burst for read and write operations.
Clock stop support.
Two input clocks (K and K#) for address and control registering at rising edges only. Two input clocks (C and C#) for data output control. Two echo clocks (CQ and CQ#) that are delivered simultaneously with data. +1.8V core power supply and 1.5V to 1.8V VDDQ, used with 0.75V to 0.9V VREF.
HSTL input and output interface.
On-chip delay-locked loop (DLL) for wide data valid window.
Full data coherency.
Boundary scan using limited set of JTAG 1149.1 functions.
Byte write capability.
Fine ball grid array (FBGA) package: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array

The 72Mb IS61DDB22M36C and IS61DDB24M18C are syn- chronous, high-performance CMOS static random access memory (SRAM) devices.