IS46TR85120BL-125KBLA2

Density 4G
Org 512Mx8
Vcc 1.5V
Type DDR3
Refresh 8K
Speed 125 = 800MHz
Status S=NOW
Pkg Pins BGA(78)
Comment Previous Rev
Product Family 46 = DDR/DDR2/DDR3/DDR4 Automotive grade
Temp. Grade A2 = Automotive Grade (-40°C to +105°C)
Solder Type L = SnAgCu
Number Of Words 5120 = 512M
CL (CAS Latency) K = 11
Low Voltage L = Supports 1.35V & 1.5V
Generation B = B
Operating Voltage Range TR = 1.5V DDR3
Bus Width 8 = x8
Package Type B = BGA

IS46TR85120BL-125KBLA2 Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
  • High speed data transfer rates with system frequency up to 1066 MHz
  • 8 internal banks for concurrent operation
  • 8n-Bit pre-fetch architecture
  • Programmable CAS Latency
  • Programmable Additive Latency: 0, CL-1,CL-2
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Programmable Burst Length: 4 and 8
  • Programmable Burst Sequence: Sequential or Interleave
  • BL switch on the fly
  • Auto Self Refresh(ASR)
  • Self Refresh Temperature(SRT) OPTIONS
  • Configuration: 512Mx8 256Mx16
  • Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.5mm) for x8 SPEED BIN ADVANCED INFORMATION MARCH 2018
  • Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
  • Partial Array Self Refresh
  • Asynchronous RESET pin
  • TDQS (Termination Data Strobe) supported (x8 only)
  • OCD (Off-Chip Driver Impedance Adjustment)
  • Dynamic ODT (On-Die Termination)
  • Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
  • Write Leveling
 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS46TR85120BL-125KBLA2-TR IS46TR85120B-125KBLA2-TR
IS46TR85120B-125KBLA1 IS46TR85120BL-125KBLA1
IS46TR85120B-125KBLA1-TR IS46TR85120BL-125KBLA1-TR
IS46TR85120B-125KBLA2