IS43DR32160C-3DBLI

Density	512M
Org	16Mx32
Vcc	1.8V
Type	DDR2
Refresh	8K
Speed	3 = 333MHz
Status	Prod
Comment
Pkg Pins	BGA(126)
Product Family	43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
Temp. Grade	I = Industrial Grade (-40°C to +85°C)
Solder Type	L = SnAgCu
Number Of Words	160 = 16M
CL (CAS Latency)	D = 5
Generation	C = C
Operating Voltage Range	DR = 1.8V DDR2
Bus Width	32 = x32
Package Type	B = BGA

Datasheet

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IS43DR32160C-3DBLI Features

Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Double data rate interface: two data transfers per clock cycle
Differential data strobe (DQS, DQS)
4-bit prefetch architecture
On chip DLL to align DQ and DQS transitions with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL) 3, 4, 5, and 6 supported
Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, and 5 supported
WRITE latency = READ latency - 1 tCK
Programmable burst lengths: 4 or 8
Adjustable data-output drive strength, full and reduced strength options
On-die termination (ODT) OPTIONS
Configuration: 16M x 32 (IS43/46DR32160C - 8K refresh)
Package: x32: 126-ball WBGA
Timing
- Cycle time 2.5ns @CL=6, DDR2-800E 3.0ns @CL=5, DDR2-667D 3.75ns @CL=4, DDR2-533C 5.0ns @CL=3, DDR2-400B

Overview

ISSI's 512Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. The 512Mb DDR2 SDRAM is provided in a wide bus x32 format, designed to offer a smaller footprint and support compact designs.

Related Part Number(s)

Description	Available Qty	Description	Stock Qty	Available Qty
IS43DR32160C-3DBLI-TR		IS43DR32160C-37CBLI-TR
IS43DR32160C-37CBL	5,000	IS43DR32160C-3DBL	2,378	36
IS43DR32160C-37CBL-TR		IS43DR32160C-3DBL-TR
IS43DR32160C-37CBLI	5,000