IS43DR32160C-3DBL

Density 512M
Org 16Mx32
Vcc 1.8V
Type DDR2
Refresh 8K
Speed 3 = 333MHz
Status Prod
Comment
Pkg Pins BGA(126)
Product Family 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
Temp. Grade blank = Commercial Grade (0°C to +70°C)
Solder Type L = SnAgCu
Number Of Words 160 = 16M
CL (CAS Latency) D = 5
Generation C = C
Operating Voltage Range DR = 1.8V DDR2
Bus Width 32 = x32
Package Type B = BGA

IS43DR32160C-3DBL Features

  • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
  • JEDEC standard 1.8V I/O (SSTL_18-compatible)
  • Double data rate interface: two data transfers per clock cycle
  • Differential data strobe (DQS, DQS)
  • 4-bit prefetch architecture
  • On chip DLL to align DQ and DQS transitions with CK
  • 4 internal banks for concurrent operation
  • Programmable CAS latency (CL) 3, 4, 5, and 6 supported
  • Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, and 5 supported
  • WRITE latency = READ latency - 1 tCK
  • Programmable burst lengths: 4 or 8
  • Adjustable data-output drive strength, full and reduced strength options
  • On-die termination (ODT) OPTIONS
  • Configuration: 16M x 32 (IS43/46DR32160C - 8K refresh)
  • Package: x32: 126-ball WBGA
  • Timing
    • Cycle time 2.5ns @CL=6, DDR2-800E 3.0ns @CL=5, DDR2-667D 3.75ns @CL=4, DDR2-533C 5.0ns @CL=3, DDR2-400B

Overview

ISSI's 512Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. The 512Mb DDR2 SDRAM is provided in a wide bus x32 format, designed to offer a smaller footprint and support compact designs.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS43DR32160C-3DBL-TR IS43DR32160C-37CBLI-TR
IS43DR32160C-37CBL 5,000 IS43DR32160C-3DBLI 97 17
IS43DR32160C-37CBL-TR IS43DR32160C-3DBLI-TR
IS43DR32160C-37CBLI 5,000