IS61WV51216EDBLL-10BLI-TR

Density	8M
Org	512Kx16
Vcc	1.65-3.6V
Status	Prod
Pkg Pins	TSOP2(44), BGA(48)
Speed Ns	8, 10, 20
Comment Previous Rev	ECC Based SRAM

Density

Org

512Kx16

Vcc

1.65-3.6V

Status

Prod

Pkg Pins

TSOP2(44), BGA(48)

Speed Ns

8, 10, 20

Comment Previous Rev

ECC Based SRAM

IS61WV51216EDBLL-10BLI-TR Features

High-speed access times: 8, 10, 20 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for greater noise immunity
Easy memory expansion with CE and OE options
CE power-down
Fully static operation: no clock or refresh required
TTL compatible inputs and outputs
Single Power Supply
- Vdd = 1.65V to 2.2V (IS61WV51216EDALL)
- Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL)
Packages available:
- 48-ball miniBGA (6mm x 8mm)
- 44-pin TSOP (Type II)
Industrial and Automotive Temperature Support
Lead-free available

Overview

The ISSI IS61WV51216EDALL and IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabri- cated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Description

Stock Qty

Available Qty

Description

Stock Qty

Available Qty

IS61WV51216EDBLL-10BLI

10,000

IS61WV51216EDBLL-10TI-TR

IS61WV51216EDALL-20BLI

IS61WV51216EDBLL-10TLI

IS61WV51216EDALL-20BLI-TR