IS61WV51216EDBLL-10BI

Density 8M
Org 512Kx16
Vcc 1.65-3.6V
Status Prod
Pkg Pins TSOP2(44), BGA(48)
Speed Ns 8, 10, 20
Comment Previous Rev ECC Based SRAM

IS61WV51216EDBLL-10BI Features

  • High-speed access times: 8, 10, 20 ns
  • High-performance, low-power CMOS process
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE options
  • CE power-down
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs
  • Single Power Supply
    • Vdd = 1.65V to 2.2V (IS61WV51216EDALL)
    • Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL)
  • Packages available:
    • 48-ball miniBGA (6mm x 8mm)
    • 44-pin TSOP (Type II)
  • Industrial and Automotive Temperature Support
  • Lead-free available

Overview

The ISSI IS61WV51216EDALL and IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabri- cated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS61WV51216EDBLL-10BI-TR IS61WV51216EDBLL-10TI-TR
IS61WV51216EDALL-20BLI IS61WV51216EDBLL-10TLI 20
IS61WV51216EDALL-20BLI-TR IS61WV51216EDBLL-10TLI-TR 1,000
IS61WV51216EDALL-20TLI IS61WV51216EDBLL-8BLI 800
IS61WV51216EDALL-20TLI-TR IS61WV51216EDBLL-8BLI-TR
IS61WV51216EDBLL-10BLI 10,000 IS61WV51216EDBLL-8TLI 1,080
IS61WV51216EDBLL-10BLI-TR 2,500 IS61WV51216EDBLL-8TLI-TR 1,000
IS61WV51216EDBLL-10TI