規格 128Kx8
電壓 2.5-3.6V
速度(ns) 55
腳位/封裝 H = sTSOP
狀態 Prod
產品系列 65 = 車用低功耗
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 L = 無鉛
温規 A3 = 車規 (-40C to +125°C)

IS65WV1288BLL-55HLA3 特徵

  • High-speed access time: 45ns, 55ns, 70ns
  • CMOS low power operation: 30 mW (typical) operating 15 µW (typical) CMOS standby
  • TTL compatible interface levels
  • Single power supply:
  • Fully static operation: no clock or refresh 1.65V--2.2V Vdd (62WV1288ALL) 2.5V--3.6V Vdd (62WV1288BLL/ 65WV1288BLL) required
  • Three state outputs
  • Automotive and Industrial temperatures available

概觀

The ISSI IS62WV1288ALL / IS62/65WV1288BLL are high-speed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV1288ALL and IS62/65WV1288BLL are packaged in the JEDEC standard 32-pin TSOP (TYPEI), sTSOP (TYPEI), SOP, and 36-pin mini BGA.