IS62WV25616BLL-55TI

容量 4M
規格 256Kx16
腳位/封裝 TSOP
電壓 1.65-3.6V
型號別 IBIS
焊接 SnPb
狀態 Prod
速度(ns) 55
温規 Industrial Grade (-40C to +85°C)
電壓範圍 2.2V (2.4V/2.5V) to 3.6V
產品系列 62 = Low Power
電壓範圍 BLL = 2.5V to 3.6V
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 blank = SnPb
字數 256 = 256K
速度 55 = 55NS
Bit Org 16 = x16
Operating Voltage WV = Wide Voltage Range
包裝代碼 T = TSOP

IS62WV25616BLL-55TI 特徵

  • High-speed access time: 55ns, 70ns
  • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby
  • TTL compatible interface levels
  • Single power supply 1.65V--2.2V Vdd (IS62WV25616ALL) 2.5V--3.6V Vdd (IS62WV25616BLL)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial temperature available

概觀

The ISSI IS62WV25616ALL/IS62WV25616BLL are high- speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS1 is LOW and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62WV25616ALL/IS62WV25616BLL are packaged in the JEDEC standard 44-Pin TSOP (TYPE II) and 48-pin mini BGA (6mmx8mm).