規格 1Mx8
電壓 1.65-3.6V
速度(ns) 55
腳位/封裝 M = BGA
狀態 Prod
評注 IS62WV10248BLL
產品系列 62 = 低電量
硅片版本 D
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 L = 無鉛
温規 I = 工業級 (-40C to +85°C)
外包裝 卷轴包

IS62WV10248DBLL-55MLI-TR 特徵

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • 30 mW (typical) operating
    • 12 µW (typical) CMOS standby
  • TTL compatible interface levels
  • Single power supply
    • 1.65V--2.2V Vdd (62/65WV10248dALL)
    • 2.4V--3.6V Vdd (62/65WV10248dBLL)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Automotive temperature (-40oC to +125oC)

概觀

The ISSI IS62WV10248DALL/ IS62WV10248DBLL are high-speed, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV10248DALL and IS62WV10248DBLL are packaged in the JEDEC standard 48-pin mini BGA (9mm x 11mm) and 44-Pin TSOP (TYPE II).