容量 4M
規格 256Kx16
電壓 1.65-3.6V
速度(ns) 8, 10, 20
腳位/封裝 TSOP2(44), BGA(48)
狀態 Prod
型號別 IBIS
評注 IS61LV25616AL

IS61WV25616BLS 特徵

  • High-speed access time: 8, 10, 20 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS)
  • High-speed access time: 25, 35, 45 ns
  • Low Active Power: 35 mW (typical)
  • Low Standby Power: 0.6 mW (typical) CMOS standby
  • Single power supply — Vdd 1.65V to 2.2V (IS61WV25616Axx) — Vdd 2.4V to 3.6V (IS61/64WV25616Bxx)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes

概觀

The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.