容量 | 64M |
---|---|
規格 | 4Mx16 |
電壓 | 1.7-1.95V/ 2.7-3.6V |
狀態 | Prod |
腳位數 | TFBGA(48) |
速度Ns | 70 |
評論上一篇 | Asynch/ Page |
速度 | 70 = 70 MHz |
Item | 67 = Automotive PSRAM/HyperRAM™ |
電壓 - 電源 | TBLL = 2.7V~3.6V |
密度配置 | 4M16 = 64Mb /4M x16 |
包裝代碼 | B = 48-ball TFBGA |
ROHS版 | L = true |
產品類別 | WVE = Asynch/Page PSRAM |
溫度範圍 | A2 = Automotive (-40°C to +105°C) |
外包裝 | Tape on Reel |
The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.