IS64LPS12832A-200TQLA3-TR - RI-YAO Electronics Ltd.

Density	4M
Org	128x32
Pkg(Pins)	QFP(100)
tKQ	3.1
Vcc	3.3V
VccQ	2.5/3.3V
Solder	Lead-free (RoHS Compliant)
Status	Prod
Comment	P/SCD
Outpack	Tape on reel
Speed(Mhz)	200
Temp.Range	Automotive Grade (-40C to +125°C)
Product Family	Automotive High Speed

Datasheet

Get Quote

IS64LPS12832A-200TQLA3-TR Features

Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and control
Burst sequence control using MODE input
Three chip enable option for simple depth ex- pansion and address pipelining
Common data inputs and data outputs
Auto Power-down during deselect
Single cycle deselect
Snooze MODE for reduced-power standby
Power Supply LPS: Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5% VPS: Vdd 2.5V + 5%, Vddq 2.5V + 5%
JEDEC 100-Pin QFP, 119-ball and 165-ball BGA packages
Automotive temperature available

Overview

The ISSI IS61(64)LPS12832A, IS61(64)LPS/VP- S12836A and IS61(64)LPS/VPS25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LPS12832A is organized as 131,072 words by 32 bits. The IS61(64)LPS/ VPS12836A is organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.