IS64LF12832A-7-TR - RI-YAO Electronics Ltd. | ISSI Authorized Distributor

Org	128Kx32
Pkg(Pins)	QFP(100)
tKQ	7.5
Vcc	3.3V
VccQ	2.5/3.3V
Status	Prod
Comment	F
Outpack	Tape on reel
Speed(Mhz)	117

IS64LF12832A-7-TR Features

Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and control
Burst sequence control using MODE input
Three chip enable option for simple depth expan- sion and address pipelining
Common data inputs and data outputs
Auto Power-down during deselect
Single cycle deselect
Snooze MODE for reduced-power standby
Power Supply LF: Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5% VF: Vdd 2.5V -5% +10%, Vddq 2.5V -5% +10%
JEDEC 100-Pin QFP, 119-pin BGA, and 165-pin BGA packages
Automotive temperature available

Overview

The ISSI IS61(64)LF12832A, IS64VF12832A, IS61(64) LF/VF12836A and IS61(64)LF/VF25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF12832A is organized as 131,072 words by 32 bits. The IS61(64)LF/ VF12836A is organized as 131,072 words by 36 bits. The IS61(64)LF/VF25618A is organized as 262,144 words by 18 bits. Fabricated with ISSI's advanced CMOS technol- ogy, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.