日耀電子有限公司
RI-YAO ELECTRONICS LTD.
日耀電子有限公司
RI-YAO
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ISSI
SRAM
Synchronous SRAM
No-Wait(ZBT)
3.3V
BGA(119), QFP(100), BGA(165)
IS61NLF12836A-6
IS61NLF12836A-6
Datasheet
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Org
128Kx36
Pkg(Pins)
BGA(119), QFP(100), BGA(165)
tKQ
6.5, 7.5
Vcc
3.3V
VccQ
2.5/3.3V
Models
IBIS
Status
Prod
Comment
F
Speed(Mhz)
177, 133
Datasheet
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IS61NLF12836A-6 Features
100 percent bus utilization
No wait cycles between Read and Write
Internal self-timed write cycle
Individual Byte Write Control
Single Read/Write control pin
Clock controlled, registered address, data and control
Interleaved or linear burst sequence control us- ing MODE input
Three chip enables for simple depth expansion and address pipelining
Power Down mode
Common data inputs and data outputs
CKE pin to enable clock and suspend operation
JEDEC 100-pin TQFP, 119-ball PBGA, and 165- ball PBGA packages
Power supply: NVF: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%) NLF: Vdd 3.3V (± 5%), Vddq 3.3V/2.5V (± 5%)
Industrial temperature available