IS64WV25616EDBLL-10BA1-TR

Density	4M
Org	256Kx16
Vcc	2.4-3.6V
Status	Prod
Pkg Pins	TSOP2(44), BGA(48)
Speed Ns	10
Comment Previous Rev	ECC Based SRAM

Datasheet

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IS64WV25616EDBLL-10BA1-TR Features

High-speed access time: 8, 10 ns
Low Active Power: 85 mW (typical)
Low Standby Power: 7 mW (typical) CMOS standby
Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns)
Fully static operation: no clock or refresh required
Three state outputs
Data control for upper and lower bytes
Industrial and Automotive temperature support
Lead-free available

Overview

The ISSI IS61/64WV25616EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- performance and low power consumption devices.

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IS64WV25616EDBLL-10BA1

IS64WV25616EDBLL-10CTA1

IS64WV25616EDBLL

IS64WV25616EDBLL-10CTA1-TR

IS64WV25616EDBLL-10BA3

IS64WV25616EDBLL-10CTA3