1. ISSI
  2. SRAM
  3. Serial SRAM/RAM
  4. 2.7-3.6V
  5. 8M
  6. SOIC(16), BGA(24)
  7. IS66WVQ2M4EDBLL-100MLI-TR

  IS66WVQ2M4EDBLL-100MLI-TR

Datasheet
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Density 8M
Vcc 2.7-3.6V
Status S=NOW
I/O Width x4
Pkg Pins SOIC(16), BGA(24)
Temp Range -40 to 105°C
Speed Mhz Ns 133 MHz
Comment Previous Rev Serial QUADRAM, ECC Based
Package Code M = 16-pin SOIC 300mil
Item 66 = Pseudo SRAM/HyperRAM™
ROHS Version L = true
Product Type WVQ = QuadRAM
Revision D = D
Temperature Range I = Industrial (-40°C to 85°C)
Vdd(V) BLL = 3V
Density Configuration 2M4 = 8Mb /2M x4
Outpack Tape on Reel
Datasheet
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IS66WVQ2M4EDBLL-100MLI-TR Features

  • Hardware Features
  • - SCLK Input: Serial clock input - SIO0
    • SIO3: Serial Data Input or Serial Data Output - DQSM: - Output during command, address transactions as Refresh Collision Indicator - Output during read data transactions as Read Data Strobe - Input during write data transactions as Write Data Mask - RESET#: Hardware Reset pin
  • Temperature Grades
  • - - Auto (A2) Grade: -40°C to +105°C Industrial: -40°C to +85°C
  • Industry Standard PACKAGE
  • - B = 24-ball TFBGA 6x8mm 5x5 Array - M = 16-pin 300mil SOIC(1) - KGD (Call Factory) Note: 1. 133MHz (max.) for 16-pin SOIC package
  • Industry Standard Serial Interface
  • - Quad DDR (x4 xSPI) Interface: Command (1 byte) =SDR Address (2-byte) & Data = DDR - Low Signal Counts :7 Signal pins (CS#, SCLK, DQSM, SIO0~SIO3)
  • High Performance
  • - On chip ECC (chunk size = 4 bit): 1-bit correction and 2-bit detection - Double Data Rate (DDR) Operation: 200MHz (200MB/s) at 1.8V VCC (1) 133MHz (133MB/s) at 3.0V VCC - Source Synchronous Output signal during Read Operation (DQSM) - Data Mask during Write Operation (DQSM) - Configurable Latency for Read/Write Operation - Supports Variable Latency mode and Fixed Latency mode - Configurable Drive Strength - Supports Wrapped Burst mode and Continuous mode - Supports Deep Power Down mode - Hidden Refresh
  • Burst Operation
  • - Configurable Wrapped Burst Length : 16, 32, 64, and 128 - Continuous Operation: - Continues Read operation until the end of array address (No Wrapped) - Continues Write operation even after the end of array address (Wrapped to first address)

Overview

The IS66/67WVQ2M4EDALL/BLL are integrated memory device containing 8Mb Pseudo Static Random Access Memory, using a self-refresh DRAM array organized as 1M words by 8 bits. The device supports Quad DDR interface, which is compatible with JEDEC standard x4 xSPI Flash. The device supports Very Low Signal Count (7 signal pins; SCLK, CS#, DQSM, and 4 SIOs) + optional ERR, Hidden Refresh Operation, and Automotive temperature (A2, -40°C to +105°C) operation. Due to DDR operation, minimum transferred data size is a byte (8 bits) through 4 SIO pins. PERFORMANCE SUMMARY.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS66WVQ2M4EDBLL-100MLI IS66WVQ2M4EDBLL-133BLI-TR
IS66WVQ2M4EDBLL-100BLI IS66WVQ2M4EDBLL-133MLI
IS66WVQ2M4EDBLL-100BLI-TR IS66WVQ2M4EDBLL-133MLI-TR
IS66WVQ2M4EDBLL-133BLI