IS45S16160G-6BLA1

Density 256M
Org 16Mx16
Vcc 3.3V
Type SDR
Refresh 8K
Speed 6 = 166MHz
Status NR
Comment
Pkg Pins TSOP2(54), BGA(54)
Temp. Grade A1 = Automotive Grade (-40°C to +85°C)
Solder Type L = SnAgCu
Generation G = G
Number Of Words 160 = 16M
Operating Voltage Range S = 3.3V SDR
Bus Width 16 = x16
Package Type B = BGA
Product Family 45 = SDR Automotive grade

IS45S16160G-6BLA1 Features

  • Clock frequency: 200,166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II 54-ball BGA

Overview

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS45S16160G-6BLA1-TR IS45S16160G-7BLA2-TR 7,500
IS45S16160G-6BLA2 IS45S16160G-7CTLA1 6,220
IS45S16160G-6BLA2-TR IS45S16160G-7CTLA1-TR 6,737
IS45S16160G-6CTLA2 IS45S16160G-7CTLA2 6,290
IS45S16160G-6CTLA2-TR IS45S16160G-7CTLA2-TR 6,711
IS45S16160G-6TLA1 6,771 IS45S16160G-7TLA1 1,000
IS45S16160G-6TLA1-TR 6,515 IS45S16160G-7TLA1-TR 5,000
IS45S16160G-7BLA1 2,784 IS45S16160G-7TLA2 1,080
IS45S16160G-7BLA1-TR 7,500 IS45S16160G-7TLA2-TR 6,879
IS45S16160G-7BLA2 6,647