IS42S86400F-6TL

Density	512M
Org	64Mx8
Vcc	3.3V
Type	SDR
Refresh	8K
Speed	6 = 166MHz
Status	Prod
Comment
Pkg Pins	TSOP2(54)
Temp. Grade	blank = Commercial Grade (0°C to +70°C)
Solder Type	L = 100% matte Sn
Generation	F = F
Number Of Words	6400 = 64M
Operating Voltage Range	S = 3.3V SDR
Bus Width	8 = x8
Package Type	T = TSOP
Product Family	42 = SDR Commercial/Industrial grade

Datasheet

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IS42S86400F-6TL Features

Clock frequency: 200, 166, 143 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxF - Vdd/Vddq = 3.3V IS42/45RxxxxxF - Vdd/Vddq = 2.5
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
8K refresh cycles every 64 ms
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command
Packages: x8/x16: 54-pin TSOP-II, 54-ball TF-BGA (x16 only)

Overview

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

Related Part Number(s)

Description	Stock Qty	Available Qty	Description	Stock Qty	Available Qty
IS42S86400F-6TL-TR		6,834	IS42S86400F-7TL-TR		6,829
IS42S86400F-6TLI		1	IS42S86400F-7TLI	44	50,000
IS42S86400F-6TLI-TR		6,500	IS42S86400F-7TLI-TR		1,500
IS42S86400F-7TL	178	3