IS42S32800J-75ETLI

Density 256M
Org 8Mx32
Vcc 3.3V
Type SDR
Refresh 4K
Speed 75E = 133MHz
Status Prod
Comment
Pkg Pins TSOP2(86), BGA(90)
Product Family 42 = SDR Commercial/Industrial grade
Temp. Grade I = Industrial Grade (-40°C to +85°C)
Solder Type L = 100% matte Sn
Number Of Words 800 = 8M
Generation J = J
Operating Voltage Range S = 3.3V SDR
Bus Width 32 = x32
Package Type T = TSOP

IS42S32800J-75ETLI Features

  • Clock frequency:166, 143, 133 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 90-ball TF-BGA, 86-pin TSOP2

Overview

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized in 2Meg x 32 bit x 4 Banks.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS42S32800J-75ETLI-TR 6,557 IS42S32800J-75EBLI 240
IS42S32800J IS42S32800J-75EBLI-TR 7,500
IS42S32800J-6BI IS42S32800J-7BI
IS42S32800J-6BI-TR IS42S32800J-7BI-TR
IS42S32800J-6BL 5,000 IS42S32800J-7BL 5,000
IS42S32800J-6BL-TR 7,500 IS42S32800J-7BL-TR 2,500
IS42S32800J-6BLI 1,440 IS42S32800J-7BLI 3,946
IS42S32800J-6BLI-TR 2,500 IS42S32800J-7BLI-TR 100,000
IS42S32800J-6TL 1,080 IS42S32800J-7TL 1,080
IS42S32800J-6TL-TR 6,614 IS42S32800J-7TL-TR 7,500
IS42S32800J-6TLI 1,080 IS42S32800J-7TLI 1,000
IS42S32800J-6TLI-TR 6,929 IS42S32800J-7TLI-TR 1,500