IS42S32160B-7BL

Density 512M
Org 16Mx32
Vcc 3.3V
Type SDR
Refresh 8K
Speed 7 = 143MHz
Status Contact ISSI
Comment
Pkg Pins TSOP2(86), BGA(90)
Product Family 42 = SDR Commercial/Industrial grade
Temp. Grade blank = Commercial Grade (0°C to +70°C)
Solder Type L = SnAgCu
Number Of Words 160 = 16M
Generation B = B
Operating Voltage Range S = 3.3V SDR
Bus Width 32 = x32
Package Type B = BGA

IS42S32160B-7BL Features

  • Clock frequency: 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8192 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 86-pin TSOP-II 90-ball W-BGA

Overview

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized in 4Meg x 32 bit x 4 Banks.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS42S32160B-7BL-TR 6,692 IS42S32160B-75EBLI 23 6,795
IS42S32160B IS42S32160B-75EBLI-TR 6,114
IS42S32160B-6BL 115 IS42S32160B-75ETL
IS42S32160B-6BL-TR IS42S32160B-75ETL-TR
IS42S32160B-6BLI 322 278 IS42S32160B-75ETLI 6,495
IS42S32160B-6BLI-TR 6,621 IS42S32160B-75ETLI-TR 6,777
IS42S32160B-6TL 50 50 IS42S32160B-7BLI 1,375 1,089
IS42S32160B-6TL-TR 1,500 IS42S32160B-7BLI-TR 6,508
IS42S32160B-6TLI 2,245 1,163 IS42S32160B-7TL 2,409 82
IS42S32160B-6TLI-TR 6,882 IS42S32160B-7TL-TR 6,224
IS42S32160B-75EBL IS42S32160B-7TLI 515
IS42S32160B-75EBL-TR IS42S32160B-7TLI-TR 6,799