IS49NLS18160-25B-TR
Features
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400MHz DDR operation (800Mb/s/pin data rate)
14.4 Gb/s peak bandwidth (x18 Separate I/O at 400
MHz clock frequency)
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Differential input clocks (CK, CK#)
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Differential input data clocks (DKx, DKx#)
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On-die DLL generates CK edge-aligned data and
output data clock signals
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Data valid signal (QVLD)
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HSTL I/O (1.5V or 1.8V nominal)
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On-die termination (ODT) RTT
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Operating temperature:
25-60Ω matched impedance outputs
2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O
IEEE 1149.1 compliant JTAG boundary scan
Commercial
(TC = 0° to +95°C; TA = 0°C to +70°C),
Industrial
(TC = -40°C to +95°C; TA = -40°C to +85°C)
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Reduced cycle time (15ns at 400MHz)
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32ms refresh (8K refresh for each bank; 64K refresh
command must be issued in total each 32ms)
8 internal banks
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Non-multiplexed addresses (address multiplexing
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option available)
SRAM-type interface
Programmable READ latency (RL), row cycle time,
and burst sequence length
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Balanced READ and WRITE latencies in order to
optimize data bus utilization
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Data mask signals (DM) to mask signal of WRITE data;
DM is sampled on both edges of DK.
OPTIONS
Package: