| Density | 18M |
|---|---|
| Org | 512Kx36 |
| Burst | 4 |
| Status | Prod |
| Speed Mhz | 300, 333, 400, 450 |
| Comments Previous Revision | 2.0 Cycle Read Latency |
| Product Family | 61 = QUAD/P DDR-2/P |
| Configuration | 51236 = 512K x36 |
| Package Code | M3 = 165-ball BGA (15 x 17 mm) |
| ROHS Version | = Leaded |
| Burst Type | B4 = Burst 4 |
| Die Rev | A = A |
| Read Latency (RL) | 2 = 2.0 clock cycles |
| ODT Option | 2 = ODT Option 2 If ODT = HIGH, a high range termination resistance is selected. If ODT = LOW or floating, ODT is disabled |
| Product Type | QDP = QUADP |
| Temperature Range | I = Industrial (-40°C to +85°C) |
| Speed | 450 = 450MHz |
| Outpack | Tape on Reel |
The 18Mb IS61QDP2B451236A/A1/A2 and IS61QDP2B41M18A/A1/A2 are synchronous, high- performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the Timing Reference Diagram for Truth Table for a description of the basic operations of these QUADP (Burst of 4) SRAMs. Read and write addresses are registered on alternating rising edges of the K clock. Reads and writes are performed in double data rate. The following are registered internally on the rising edge of the K clock: