IS61QDP2B22M36C1-400B4L-TR

Density 72M
Org 2Mx36
Burst 2
Status Prod
Speed Mhz 300, 333, 400, 450
Comments Previous Revision 2.0 Cycle Read Latency
Product Family 61 = QUAD/P DDR-2/P
Configuration 2M36 = 2M x36
Package Code B4 = 165 ball BGA (13 x 15 mm)
ROHS Version L = Lead-free
Burst Type B2 = Burst 2
Die Rev C = C
Read Latency (RL) 2 = 2.0 clock cycles
ODT Option 1 = ODT Option 1 If ODT = HIGH or floating, a high range termination resistance is selected. If ODT = LOW, a low range termination resistance is selected.
Product Type QDP = QUADP
Temperature Range blank = Commercial (0°C to 70°C)
Speed 400 = 400MHz
Outpack Tape on Reel

IS61QDP2B22M36C1-400B4L-TR Features

  • 2Mx36 and 4Mx18 configuration available.
  • On-chip Delay-Locked Loop (DLL) for wide data valid window.
  • Separate independent read and write ports with concurrent read and write operations.
  • Max. 450 MHz clock for high bandwidth
  • Synchronous pipeline read with EARLY write operation.
  • Double Data Rate (DDR) interface for read and
  • write input ports. 2.0 Cycle read latency. Fixed 2-bit burst for read and write operations. Two input clocks (K and K#) for address and control registering at rising edges only. Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.
  • Data valid pin (QVLD).
  • HSTL input and output interface.
  • Full data coherency.
  • Boundary scan using limited set of JTAG 1149.1 functions.
  • Byte Write capability.
  • Fine ball grid array (FBGA) package option: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array
  • Programmable impedance output drivers via 5x user-supplied precision resistor.
  • ODT (On Die Termination) feature is supported optionally on data input, K/K#, and BWx#.

Overview

The IS61QDP2B22M36C/C1/C2 and IS61QDP2B24M18 C/C1/C2 are 72Mb synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the Timing Reference Diagram for Truth Table for a description of the basic operations of these QUADP (Burst of 2) SRAMs. The input address bus operates at double data rate. Byte writes can change with the corresponding data-in to enable or disable writes on a per-byte basis. An internal write buffer enables the data-ins to be registered half a cycle earlier than the write address. The first data-in burst is clocked at the same time as the write command signal, and the second burst is timed to the following rising edge of the K# clock. During the burst read operation, the data-outs from the first bursts are updated from output registers of the second rising edge of the K# clock (starting two and half cycles later after read command). The data-outs from the second bursts are updated with the third rising edge of the K clock. The K and K# clocks are used to time the data-outs. The device is operated with a single +1.8V power supply and is compatible with HSTL I/O interface.

 

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