| Density | 18M |
|---|---|
| Org | 1Mx18 |
| Burst | 2 |
| Status | Prod |
| Speed Mhz | 300, 333, 400, 450 |
| Comments Previous Revision | 2.0 Cycle Read Latency |
| Product Family | 61 = QUAD/P DDR-2/P |
| Configuration | 1M18 = 1M x18 |
| Package Code | B4 = 165 ball BGA (13 x 15 mm) |
| ROHS Version | = Leaded |
| Burst Type | B2 = Burst 2 |
| Die Rev | C = C |
| Read Latency (RL) | 2 = 2.0 clock cycles |
| ODT Option | 1 = ODT Option 1 If ODT = HIGH or floating, a high range termination resistance is selected. If ODT = LOW, a low range termination resistance is selected. |
| Product Type | QDP = QUADP |
| Temperature Range | blank = Commercial (0°C to 70°C) |
| Speed | 400 = 400MHz |
The are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the.