| Density | 36M |
|---|---|
| Org | 2Mx18 |
| Burst | 2 |
| Status | Prod |
| Speed Mhz | 250, 300, 333 |
| Comments Previous Revision | IS61QDB22M18 |
| Product Family | 61 = QUAD/P DDR-2/P |
| Configuration | 2M18 = 2M x18 |
| Package Code | M3 = 165-ball BGA (15 x 17 mm) |
| ROHS Version | = Leaded |
| Burst Type | B2 = Burst 2 |
| Die Rev | A = A |
| Read Latency (RL) | blank = 1.5 clock cycles or 2.5 clock cycles |
| ODT Option | blank = No ODT |
| Product Type | QD = QUAD |
| Temperature Range | I = Industrial (-40°C to +85°C) |
| Speed | 250 = 250MHz |
The Mb synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the.