IS61QDB21M18A-333B4LI

Density	18M
Org	1Mx18
Burst	2
Status	Prod
Speed Mhz	250, 300, 333
Comments Previous Revision
Product Family	61 = QUAD/P DDR-2/P
Configuration	1M18 = 1M x18
Package Code	B4 = 165 ball BGA (13 x 15 mm)
ROHS Version	L = Lead-free
Burst Type	B2 = Burst 2
Die Rev	A = A
Read Latency (RL)	blank = 1.5 clock cycles or 2.5 clock cycles
ODT Option	blank = No ODT
Product Type	QD = QUAD
Temperature Range	I = Industrial (-40°C to +85°C)
Speed	333 = 333MHz

Datasheet

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IS61QDB21M18A-333B4LI Features

512Kx36 and 1Mx18 configuration available.
On-chip Delay-Locked Loop (DLL) for wide data valid window.
Separate independent read and write ports with concurrent read and write operations.
Synchronous pipeline read with EARLY write operation.
Double Data Rate (DDR) interface for read and write input ports.
Fixed 2-bit burst for read and write operations.
Clock stop support.
Two input clocks (K and K#) for address and control registering at rising edges only. Two output clocks (C and C#) for data output control. Two echo clocks (CQ and CQ#) that are delivered simultaneously with data. +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF.
HSTL input and output levels.
Registered addresses, write and read controls, byte writes, data in, and data outputs.
Full data coherency.
Boundary scan using limited set of JTAG 1149.1 functions.
Byte write capability.
Fine ball grid array (FBGA) package: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array
Read address
Read enable
Write enable
Byte writes
Data-in for early writes The following are registered on the rising edge of the K# clock:
Write address
Byte writes

Overview

The synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the.

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IS61QDB21M18A-333B4LI-TR

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