IS61DDPB24M18C1-500B4I

Density 72M
Org 4Mx18
Burst 2
Status Prod
Speed Mhz 450, 500, 550, 567
Comments Previous Revision 2.5 Cycle Read Latency, IS61DDPB24M18A/A1/A2
Product Family 61 = QUAD/P DDR-2/P
Configuration 4M18 = 4M x18
Package Code B4 = 165 ball BGA (13 x 15 mm)
ROHS Version = Leaded
Burst Type B2 = Burst 2
Die Rev C = C
Read Latency (RL) blank = 1.5 clock cycles or 2.5 clock cycles
ODT Option 1 = ODT Option 1 If ODT = HIGH or floating, a high range termination resistance is selected. If ODT = LOW, a low range termination resistance is selected.
Product Type DDP = DDR-IIP, Common I/O
Temperature Range I = Industrial (-40°C to +85°C)
Speed 500 = 500MHz

IS61DDPB24M18C1-500B4I Features

  • 2Mx36 and 4Mx18 configuration available.
  • Common I/O read and write ports.
  • Max. 567 MHz clock for high bandwidth
  • Synchronous pipeline read with self-timed late write operation.
  • Double Data Rate (DDR) interface for read and
  • write input ports. 2.5 cycle read latency. Fixed 2-bit burst for read and write operations. Two input clocks (K and K#) for address and control registering at rising edges only. Two echo clocks (CQ and CQ#) that are delivered simultaneously with data. +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF.
  • HSTL input and output interface.
  • Full data coherency.
  • On-chip Delay-Locked Loop (DLL) for wide data valid window.
  • Boundary scan using limited set of JTAG 1149.1 functions.
  • Byte write capability.
  • Fine ball grid array (FBGA) package: 13mm x 15mm & 15mm x 17mm body size 165-ball (11 x 15) array
  • Programmable impedance output drivers via 5x user-supplied precision resistor.
  • Data Valid Pin (QVLD).
  • ODT (On Die Termination) feature is supported optionally on data input, K/K#, and BWx#.

Overview

The 72Mb IS61DDPB22M36C/C1/C2 and IS61DDPB24M18 C/C1/C2 are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have a common I/O bus. The rising edge of K clock initiates the read/write operation, and all internal opera- tions are self-timed. Refer to the Timing Reference Diagram for Truth Table for a description of the basic operations of these DDR-IIP (Burst of 2) CIO SRAMs. Read and write addresses are registered on alternating rising edges of the K clock. Reads and writes are performed in double data rate. Byte writes can change with the corresponding data-in to enable or disable writes on a per-byte basis. An internal write buffer enables the data-ins to be registered one cycle after the write address. The first data-in burst is clocked one cycle later than the write command signal, and the second burst is timed to the following rising edge of the K# clock. During the burst read operation, the data-outs from the first bursts are updated from output registers of the third rising edge of the K# clock (starting two and half cycles later after read command). The data-outs from the second burst are updated with the fourth rising edge of the K clock where read command receives at the first rising edge of K. The device is operated with a single +1.8V power supply and is compatible with HSTL I/O interfaces.

 

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Description Stock Qty Available Qty Description Stock Qty Available Qty
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IS61DDPB24M18C-450M3LI IS61DDPB24M18C2-450B4L-TR
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