| Density | 18M |
|---|---|
| Org | 1Mx18 |
| Burst | 4 |
| Status | Prod |
| Speed Mhz | 250, 300, 333, 400 |
| Comments Previous Revision | |
| Product Family | 61 = QUAD/P DDR-2/P |
| Configuration | 1M18 = 1M x18 |
| Package Code | M3 = 165-ball BGA (15 x 17 mm) |
| ROHS Version | L = Lead-free |
| Burst Type | B4 = Burst 4 |
| Die Rev | C = C |
| Read Latency (RL) | blank = 1.5 clock cycles or 2.5 clock cycles |
| ODT Option | blank = No ODT |
| Product Type | DD = DDR-II, Common I/O |
| Temperature Range | I = Industrial (-40°C to +85°C) |
| Speed | 300 = 300MHz |
The 18Mb IS61DDB451236C and IS61DDB41M18C are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have a common I/O bus. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the Timing Reference Diagram for Truth Table for a description of the basic operations of these DDR-II (Burst of 4) CIO SRAMs. Read and write addresses are registered on alternating rising edges of the K clock. Reads and writes are performed in double data rate. The following are registered internally on the rising edge of the K clock: