Org | 16Mx32 |
---|---|
Pkg(Pins) | BGA(90) |
Vcc | 1.8V |
Refresh | 8K |
No. of Words | 16M |
Models | IBIS, IBIS(46) |
Solder | SnAgCu |
Status | Prod |
Type | MDDR |
Bus Width | 32 = x32 |
Speed(Mhz) | up to 166Mhz |
Temp.Range | Automotive Grade (-40C to +105°C) |
Generation/Rev | B |
Product Family | 46 = DDR/DDR2/DDR3/DDR4 Automotive grade |
Speed | 6 = 166MHz |
Operating Voltage Range | LR = 1.8V mobile DDR (LPDDR) |
Generation | B = B |
Package Type | B = BGA |
Temp. Grade | A2 = Automotive Grade (-40°C to +105°C) |
Solder Type | L = SnAgCu |
Number Of Words | 160 = 16M |
The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.