Density | 512M |
---|---|
Org | 16Mx32 |
Vcc | 1.8V |
Type | MDDR |
Refresh | 8K |
Status | Prod |
Pkg Pins | BGA(90) |
Speed Mhz | 200, 166, 133 |
Comment Previous Rev | IS43/46LR32160B |
Speed | 5 = 200MHz |
Operating Voltage Range | LR = 1.8V mobile DDR (LPDDR) |
Generation | C = C |
Bus Width | 32 = x32 |
Package Type | B = BGA |
Product Family | 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade |
Temp. Grade | I = Industrial Grade (-40°C to +85°C) |
Solder Type | L = SnAgCu |
Number Of Words | 160 = 16M |
The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.
Description | Stock Qty | Available Qty | Description | Stock Qty | Available Qty |
---|---|---|---|---|---|
IS43LR32160C-5BLI-TR | IS46LR32160C-5BLA1-TR | ||||
IS43LR32160C-5BL | IS46LR32160C-5BLA2 | 5 | 2 | ||
IS43LR32160C-5BL-TR | IS46LR32160C-5BLA2-TR | ||||
IS43LR32160C-6BL | 6,228 | IS46LR32160C-6BLA1 | 6,865 | ||
IS43LR32160C-6BL-TR | 7,500 | IS46LR32160C-6BLA1-TR | 7,500 | ||
IS43LR32160C-6BLI | 1,200 | IS46LR32160C-6BLA2 | 129 | 129 | |
IS43LR32160C-6BLI-TR | 2,500 | IS46LR32160C-6BLA2-TR | 7,500 | ||
IS46LR32160C-5BLA1 |