| Buy | |
|---|---|
| Density | 4G |
| Org | Two channel (2x16) |
| Vcc | 0.6V/1.1V/1.8V |
| Type | LPDDR4X |
| Speed | 075 = 1333Mhz |
| Status | Prod |
| Pkg Pins | BGA(200) |
| Product Family | 46 = DDR/DDR2/DDR3/DDR4 Automotive grade |
| Temp. Grade | A3 = Automotive Grade (-40°C to +125°C) |
| Solder Type | L = SnAgCu |
| Number Of Words | 128 = 128M |
| Low Voltage | L = Supports only 0.6V I/O (LPDDR4X) |
| Generation | EA = EA |
| Operating Voltage Range | LQ = 1.1V LPDDR4 |
| Bus Width | 32 = x32 |
| Package Type | B = BGA |
| Outpack | Tape on Reel |
The IS43/46LQ16256EA/EAL and IS43/46LQ32128EA/EAL are 4Gbit CMOS LPDDR4 SDRAM. The device is organized as 1/2 channels per device, and individual channel is 8-banks and 16-bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth. , On-chip temperature sensor whose status.