IS43LQ16256EAL-062BLI

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Density 4G
Org Single Channel (1x16)
Vcc 0.6V/1.1V/1.8V
Type LPDDR4X
Speed 3200
Status Prod
Pkg Pins BGA(200)
Product Family 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
Temp. Grade I = Industrial Grade (-40°C to +85°C)
Solder Type L = SnAgCu
Number Of Words 256 = 256M
Low Voltage L = Supports only 0.6V I/O (LPDDR4X)
Generation EA = EA
Operating Voltage Range LQ = 1.1V LPDDR4
Bus Width 16 = x16
Package Type B = BGA

IS43LQ16256EAL-062BLI Features

  • On-chip temperature sensor whose status can be read from MR4
  • 200-ball x16/x32 BGA (10x14.5mm) ADDRESS TABLE * Parameter # of Channel Row Addresses Column Addresses Bank Addresses Note: Address information is per channel base. R0-R14 1 C0-C9 BA0-BA2 2 R0-R13 Speed Grade KEY TIMING PARAMETERS Write Latency Set B 26 22 Set A 14 12 Data Rate (Mb/s) Freq. (MHz) 3200 2666
  • -062 -075 1600 1333 Read Latency DBI DBI OFF ON 32 28 24 28 Configuration: - 256Mb x16 x 1 channel - 128Mb x 16 x 2 channels - 8 internal banks per channel
  • On-Chip ECC:
  • - Single-bit error correction (per 64-bits)
  • Low-voltage Core and I/O Power Supplies VDD1 = 1.70-1.95V VDD2 = 1.06-1.17V VDDQ = 1.06-1.17V (LPDDR4) VDDQ = 0.57-0.65V (LPDDR4X) LVSTL(Low Voltage Swing Terminated Logic) I/O Interface Internal VREF and VREF Training
  • Dynamic ODT : DQ ODT :VSSQ Termination CA ODT :VSS Termination
  • Max. Clock Frequency : 1.6GHz (3.2Gbps)
  • 16n Pre-fetch DDR architecture
  • Single data rate (multiple cycles) command/ address bus
  • Bidirectional/differential data strobe per byte of data (DQS/DQS#)
  • Programmable burst lengths (16 or 32)
  • ZQ Calibration
  • Operation Temperature Industrial (TC = -40°C to 95°C) Automotive, A1 (TC = -40°C to 95°C) Automotive, A2 (TC = -40°C to 105°C) Automotive, A3 (TC = -40°C to 125°C)

Overview

The IS43/46LQ16256EA/EAL and IS43/46LQ32128EA/EAL are 4Gbit CMOS LPDDR4 SDRAM. The device is organized as 1/2 channels per device, and individual channel is 8-banks and 16-bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth. , On-chip temperature sensor whose status.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS43LQ16256EAL-062BLI-TR IS43LQ16256EAL-075B2LI-TR
IS43LQ16256EAL-062B2LI IS43LQ16256EAL-075BLI
IS43LQ16256EAL-062B2LI-TR IS43LQ16256EAL-075BLI-TR
IS43LQ16256EAL-075B2LI