IS42VM16800E-75BLI-TR

Density 128M
Org 8Mx16
Vcc 1.8V
Type MSDR
Refresh 4K
Status Contact ISSI
Comment
Pkg Pins TSOP2(54), BGA(54)
Speed Mhz 133
Temp. Grade I = Industrial Grade (-40°C to +85°C)
Solder Type L = SnAgCu
Generation E = E
Number Of Words 800 = 8M
Speed 75 = 133Mhz
Operating Voltage Range VM = 1.8V mobile SDR
Bus Width 16 = x16
Package Type B = BGA
Product Family 42 = SDR Commercial/Industrial grade
Outpack Tape on Reel

IS42VM16800E-75BLI-TR Features

  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access and pre- charge
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page
  • Programmable Burst Sequence:
  • Sequential and Interleave
  • Auto Refresh (CBR)
  • TCSR (Temperature Compensated Self Refresh)
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full
  • Deep Power Down Mode (DPD)
  • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS
  • Configurations: 16M x 8, 8M x 16, 4M x 32
  • Power Supply IS42VMxxx
    • Vdd/Vddq = 1.8 V
  • Packages: x8 / x16
    • TSOP II (54), BGA (54) [x16 only] x32
    • TSOP II (86), BGA (90)

Overview

ISSI's 128Mb Mobile Synchronous DRAM achieves high- speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 128Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS42VM16800E-75BLI 1,667 730 IS42VM16800E-75TLI 1,639 1,080
IS42VM16800E-75BL IS42VM16800E-75TLI-TR
IS42VM16800E-75BL-TR