1. ISSI
  2. Mobile DRAM
  3. Low Voltage/Mobile SDR SDRAM
  4. Preceding Low Voltage and Mobile SDR DRAM
  5. 1.8/2.5/3.3V
  6. 256M 16Mx16
  7. BGA(54)
  8. IS42VM16160E-75BLI

  IS42VM16160E-75BLI

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Density 256M
Org 16Mx16
Vcc 1.8/2.5/3.3V
Type MSDR
Refresh 8K
Status EOL
Comment
Pkg Pins BGA(54)
Speed Mhz 166, 133
Temp. Grade I = Industrial Grade (-40°C to +85°C)
Solder Type L = SnAgCu
Generation E = E
Number Of Words 160 = 16M
Speed 75 = 133Mhz
Operating Voltage Range VM = 1.8V mobile SDR
Bus Width 16 = x16
Package Type B = BGA
Product Family 42 = SDR Commercial/Industrial grade
Datasheet
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IS42VM16160E-75BLI Features

  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 8K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal 4 banks operation.
  • Burst Read Single Write operation.
  • Special Function Support. - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control
  • Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode

Overview

These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS42VM16160E-75BLI-TR 6,094 IS42SM16160E-6BLI-TR 6,783
IS42RM16160E-6BLI 6,958 IS42SM16160E-75BLI 5,000
IS42RM16160E-6BLI-TR 6,220 IS42SM16160E-75BLI-TR 6,293
IS42RM16160E-75BLI 6,439 IS42VM16160E-6BLI 6,664
IS42RM16160E-75BLI-TR 5,000 IS42VM16160E-6BLI-TR 6,150
IS42SM16160E-6BLI 5,000