IS42VM16160D-8BL

Density 256M
Org 16Mx16
Vcc 1.8V
Type MSDR
Refresh 8K
Status EOL
Comment
Pkg Pins TSOP(54), BGA(54)
Speed Mhz 125
Temp. Grade blank = Commercial Grade (0°C to +70°C)
Solder Type L = SnAgCu
Generation D = D
Number Of Words 160 = 16M
Operating Voltage Range VM = 1.8V mobile SDR
Bus Width 16 = x16
Package Type B = BGA
Product Family 42 = SDR Commercial/Industrial grade

IS42VM16160D-8BL Features

  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access and pre- charge
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page
  • Programmable Burst Sequence:
  • Sequential and Interleave
  • Auto Refresh (CBR)
  • TCSR (Temperature Compensated Self Refresh)
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full
  • Deep Power Down Mode (DPD)
  • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS
  • Configurations:
    • 32M x 8
    • 16M x 16
    • 8M x 32
  • Power Supply IS42VMxxx
    • Vdd/Vddq = 1.8V
  • Packages: x8
    • TSOP II (54) x16
    • TSOP II (54), BGA (54) x32
    • TSOP II (86), BGA (90)

Overview

ISSI's 256Mb Mobile Synchronous DRAM achieves high- speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS42VM16160D-8BL-TR 6,430 IS42VM16160D-8TLI 5,403 2,799
IS42VM16160D-8BLI 41,943 20,395 IS42VM16160D-8TLI-TR 1,500
IS42VM16160D-8BLI-TR 6,428