IS42SM32160C-75BL-TR

Density 512M
Org 16Mx32
Vcc 2.5/3.3V
Type MSDR
Refresh 8K
Status EOL
Comment
Pkg Pins BGA(90)
Speed Mhz 133
Temp. Grade blank = Commercial Grade (0°C to +70°C)
Solder Type L = SnAgCu
Generation C = C
Number Of Words 160 = 16M
Speed 75 = 133Mhz
Operating Voltage Range SM = 3.3V
Bus Width 32 = x32
Package Type B = BGA
Product Family 42 = SDR Commercial/Industrial grade
Outpack Tape on Reel

IS42SM32160C-75BL-TR Features

  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access and pre- charge
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page
  • Programmable Burst Sequence:
  • Sequential and Interleave
  • Auto Refresh (CBR)
  • TCSR (Temperature Compensated Self Refresh)
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full
  • Deep Power Down Mode (DPD)
  • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS:
  • Configuration: 16Mx32
  • Power Supply: IS42SMxxx - Vdd/Vddq = 3.3V IS42RMxxx - Vdd/Vddq = 2.5V
  • Package: 90 Ball BGA (8x13mm)
  • Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC)

Overview

: ISSI's IS42SM/RM32160C is a 512Mb Mobile Syn- chronous DRAM configured as a quad 4M x32 DRAM. It achieves high-speed data transfer using a pipeline architecture with a synchronous interface. All inputs and outputs signals are registered on the rising edge of the clock input, CLK. The 512Mb SDRAM is internally con- figured by stacking two 256Mb, 16Mx16 devices. Each of the 4M x32 banks is organized as 8192 rows by 512 columns by 32 bits.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS42SM32160C-75BL 551 545 IS42SM32160C-75BLI-TR 6,702
IS42RM32160C-75BL 901 859 IS42SM32160C-7BL
IS42RM32160C-75BL-TR 6,984 IS42SM32160C-7BL-TR
IS42RM32160C-75BLI 6,331 IS42SM32160C-7BLI 380 380
IS42RM32160C-75BLI-TR 6,747 IS42SM32160C-7BLI-TR 6,976
IS42SM32160C-75BLI 665 665