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Density | 64M |
Org | 8Mx8 |
Vcc | 2.7-3.6V |
Status | Prod |
Pkg Pins | BGA(24) |
Speed Mhz | 133 |
Comment Previous Rev | ECC Based |
Speed | 133 = 133 MHz |
Item | 66 = Pseudo SRAM/HyperRAM™ |
Vdd(V) | BLL = 3V |
Density Configuration | 8M8 = 64Mb /8M x8 |
Package Code | B1 = 24-ball TFBGA |
ROHS Version | L = true |
Revision | D = D |
Product Type | WVH = HyperRAM |
Temperature Range | I = Industrial (-40°C to 85°C) |
Outpack | Tape on Reel |
The IS66/67WVH8M8EDALL/BLL are integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 8M words by 8 bits. The device supports a HyperBus interface, Very Low Signal Count (Address, Command and data through 8 DQ pins), Hidden Refresh Operation, and Automotive Temperature Operation, designed specially for Mobile and Automotive applications.
Description | Stock Qty | Available Qty | Description | Stock Qty | Available Qty |
---|---|---|---|---|---|
IS66WVH8M8EDBLL-133B1LI | IS66WVH8M8EDBLL-100B2LI-TR | ||||
IS66WVH8M8EDBLL-100B1LI | IS66WVH8M8EDBLL-166B1LI | ||||
IS66WVH8M8EDBLL-100B1LI-TR | IS66WVH8M8EDBLL-166B1LI-TR | ||||
IS66WVH8M8EDBLL-100B2LI |