Density | 128M |
---|---|
Org | 16Mx8 |
Vcc | 2.7-3.6V |
Status | Prod |
Pkg Pins | BGA(24) |
Speed Mhz | 100 |
Comment Previous Rev | |
Package Code | B1 = 24-ball TFBGA |
Item | 66 = Pseudo SRAM/HyperRAM™ |
ROHS Version | L = true |
Product Type | WVH = HyperRAM |
Temperature Range | I = Industrial (-40°C to 85°C) |
Speed | 100 = 100 MHz |
Vdd(V) | BLL = 3V |
Density Configuration | 16M8 = 128Mb /16M x8 |
The IS66/67WVH16M8ALL/BLL are integrated memory device of 128Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 16M words by 8 bits. The device is a dual die stack of two 64Mb die. The device supports a HyperBus interface, Very Low Signal Count (Address, Command and data through 8 DQ pins), Hidden Refresh Operation, and Automotive Temperature Operation, designed specially for Mobile and Automotive applications.
Description | Stock Qty | Available Qty | Description | Stock Qty | Available Qty |
---|---|---|---|---|---|
IS66WVH16M8BLL-100B1LI-TR | IS67WVH16M8BLL-100B1LA2-TR | ||||
IS66WVH16M8BLL-100B2LI | IS67WVH16M8BLL-100B2LA1 | ||||
IS66WVH16M8BLL-100B2LI-TR | IS67WVH16M8BLL-100B2LA1-TR | ||||
IS67WVH16M8BLL-100B1LA1 | IS67WVH16M8BLL-100B2LA2 | ||||
IS67WVH16M8BLL-100B1LA1-TR | IS67WVH16M8BLL-100B2LA2-TR | ||||
IS67WVH16M8BLL-100B1LA2 |