| Density | 16M |
|---|---|
| Org | 1Mx16 |
| Vcc | 3.3V |
| Type | EDO |
| Refresh | 1K |
| Speed | 50 = 50Ns |
| Status | Prod |
| Pkg Pins | SOJ(42), TSOP2(44/50) |
| Comment Previous Rev | IS41LV16100C |
| Product Family | 41 = Asynchronous |
| Temp. Grade | I = Industrial Grade (-40°C to +85°C) |
| Solder Type | blank = Sn/Pb |
| Number Of Words | 100 = 1M |
| Generation | D = D |
| Operating Voltage Range | LV = 3.3V |
| Bus Width | 16 = x16 |
| Package Type | T = TSOP |
The ISSI IS41LV16100D is a 1,048,576 x 16-bit high- performance CMOS Dynamic Random Access Memories. These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 30 ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O.
| Description | Stock Qty | Available Qty | Description | Stock Qty | Available Qty |
|---|---|---|---|---|---|
| IS41LV16100D-50TI-TR | IS41LV16100D-50KLI | 7 | |||
| IS41LV16100D | IS41LV16100D-50KLI-TR | 5,000 | |||
| IS41LV16100D-50KI | IS41LV16100D-50TLI | 11,700 | |||
| IS41LV16100D-50KI-TR | IS41LV16100D-50TLI-TR | 4,400 |