| Density | 4M |
|---|---|
| Org | 256Kx16 |
| Pkg(Pins) | TSOP2(40/44) |
| Vcc | 3.3V |
| Refresh | 512 |
| Speed | 35 |
| No. of Words | 256M |
| Solder | SnPb |
| Status | NR |
| Type | EDO |
| Bus Width | 16 = x16 |
| Temp.Range | Industrial Grade (-40C to +85°C) |
| Generation/Rev | C |
| Product Family | 41 = Asynchronous |
| Temp. Grade | I = Industrial Grade (-40°C to +85°C) |
| Solder Type | blank = Sn/Pb |
| Number Of Words | 256 = 256M |
| Generation | C = C |
| Operating Voltage Range | C = 5V |
| Package Type | T = TSOP |
The IS41C16256C and IS41LV16256C are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo- ries. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 14ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O.