Density | 4M |
---|---|
Org | 256Kx16 |
Pkg(Pins) | TSOP2(40/44) |
Vcc | 5V |
Refresh | 512 |
Speed | 35 |
No. of Words | 256M |
Solder | SnPb |
Status | Prod |
Outpack | Tape on Reel |
Type | EDO |
Bus Width | 16 = x16 |
Temp.Range | Industrial Grade (-40C to +85°C) |
Generation/Rev | C |
Product Family | 41 = Asynchronous |
Temp. Grade | I = Industrial Grade (-40°C to +85°C) |
Solder Type | blank = Sn/Pb |
Number Of Words | 256 = 256M |
Generation | C = C |
Operating Voltage Range | C = 5V |
Package Type | T = TSOP |
The IS41C16256C and IS41LV16256C are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo- ries. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 14ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O.